Bandgap engineering of CdxZn1-xTe nanowires
Davami K, Pohl J, Shaygan M, Kheirabi N, Faryabi H, Cuniberti G, Lee JS, Meyyappan M (2013)
Publication Type: Journal article
Publication year: 2013
Journal
Book Volume: 5
Pages Range: 932-935
Journal Issue: 3
DOI: 10.1039/c2nr33284a
Abstract
Bandgap engineering of single-crystalline alloy CdxZn 1-xTe (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1-xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications. © 2013 The Royal Society of Chemistry.
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How to cite
APA:
Davami, K., Pohl, J., Shaygan, M., Kheirabi, N., Faryabi, H., Cuniberti, G.,... Meyyappan, M. (2013). Bandgap engineering of CdxZn1-xTe nanowires. Nanoscale, 5(3), 932-935. https://dx.doi.org/10.1039/c2nr33284a
MLA:
Davami, Keivan, et al. "Bandgap engineering of CdxZn1-xTe nanowires." Nanoscale 5.3 (2013): 932-935.
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