Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

Ghorbani-Asl M, Borini S, Kuc AB, Heine T (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 87

Article Number: 235434

Journal Issue: 23

DOI: 10.1103/PhysRevB.87.235434

Abstract

Quantum conductance calculations on the mechanically deformed monolayers of MoS2 and WS2 were performed using the nonequlibrium Green's functions method combined with the Landauer-Büttiker approach for ballistic transport together with the density-functional-based tight binding method. Tensile strain causes significant changes in the electronic structure of transition-metal dichalcogenide single layers and eventually the semiconductor-metal transition occurs for elongations as large as 11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials. © 2013 American Physical Society.

Involved external institutions

Jacobs University Bremen gGmbH DE Germany (DE)

How to cite

APA:

Ghorbani-Asl, M., Borini, S., Kuc, A.B., & Heine, T. (2013). Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides. Physical Review B - Condensed Matter and Materials Physics, 87(23). https://doi.org/10.1103/PhysRevB.87.235434

MLA:

Ghorbani-Asl, Mahdi, et al. "Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides." Physical Review B - Condensed Matter and Materials Physics 87.23 (2013).

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