Defect-induced conductivity anisotropy in MoS 2 monolayers

Ghorbani-Asl M, Enyashin AN, Kuc A, Seifert G, Heine T (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 88

Article Number: 245440

Journal Issue: 24

DOI: 10.1103/PhysRevB.88.245440

Abstract

Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the density-functional-based tight-binding method in conjunction with the Green's function approach. Intrinsic defects in MoS2 monolayers significantly affect their electronic properties. Even at low concentration they considerably alter the quantum conductance. While the electron transport is practically isotropic in pristine MoS2, strong anisotropy is observed in the presence of defects. Localized midgap states are observed in semiconducting MoS2 that do not contribute to the conductivity but direction-dependent scatter the current, and that the conductivity is strongly reduced across line defects and selected grain boundary models. © 2013 American Physical Society.

Involved external institutions

Jacobs University Bremen gGmbH DE Germany (DE) Technische Universität Dresden DE Germany (DE)

How to cite

APA:

Ghorbani-Asl, M., Enyashin, A.N., Kuc, A., Seifert, G., & Heine, T. (2013). Defect-induced conductivity anisotropy in MoS 2 monolayers. Physical Review B - Condensed Matter and Materials Physics, 88(24). https://doi.org/10.1103/PhysRevB.88.245440

MLA:

Ghorbani-Asl, Mahdi, et al. "Defect-induced conductivity anisotropy in MoS 2 monolayers." Physical Review B - Condensed Matter and Materials Physics 88.24 (2013).

BibTeX: Download