Deposition of topological insulator Sb2Te3 films by an MOCVD process

Bendt G, Zastrow S, Nielsch K, Mandal PS, Sanchez-Barriga J, Rader O, Schulz S (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Journal of Materials Chemistry A Royal Society of Chemistry

Book Volume: 2

Pages Range: 8215-8222

Journal Issue: 22

DOI: 10.1039/c4ta00707g

Abstract

Layered Sb2Te3 films were grown by a MOCVD process on Al2O3(0001) substrates at 400 °C by use of i-Pr 3Sb and Et2Te2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy. © 2014 the Partner Organisations.

Involved external institutions

Universität Duisburg-Essen (UDE) DE Germany (DE) Universität Hamburg (UHH) DE Germany (DE) Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE)

How to cite

APA:

Bendt, G., Zastrow, S., Nielsch, K., Mandal, P.S., Sanchez-Barriga, J., Rader, O., & Schulz, S. (2014). Deposition of topological insulator Sb2Te3 films by an MOCVD process. Journal of Materials Chemistry A, 2(22), 8215-8222. https://doi.org/10.1039/c4ta00707g

MLA:

Bendt, Georg, et al. "Deposition of topological insulator Sb2Te3 films by an MOCVD process." Journal of Materials Chemistry A 2.22 (2014): 8215-8222.

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