Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions

Fabretti S, Zierold R, Nielsch K, Voigt C, Ronning C, Peretzki P, Seibt M, Thomas A (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 105

Article Number: 132405

Journal Issue: 13

DOI: 10.1063/1.4896994

Abstract

Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Universität Bielefeld DE Germany (DE) Universität Hamburg (UHH) DE Germany (DE) Georg-August-Universität Göttingen DE Germany (DE) Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE)

How to cite

APA:

Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P.,... Thomas, A. (2014). Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters, 105(13). https://doi.org/10.1063/1.4896994

MLA:

Fabretti, Savio, et al. "Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions." Applied Physics Letters 105.13 (2014).

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