Contact properties of ultrasmall carbon nanotube transistors from Ab-initio
Fediai A, Ryndyk D, Cuniberti G (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: IEEE Computer Society
Pages Range: 110-114
Conference Proceedings Title: 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology, ELNANO 2014 - Conference Proceedings
Event location: UKR
ISBN: 9781479945801
DOI: 10.1109/ELNANO.2014.6873948
Abstract
Based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles. © 2014 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Fediai, A., Ryndyk, D., & Cuniberti, G. (2014). Contact properties of ultrasmall carbon nanotube transistors from Ab-initio. In 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology, ELNANO 2014 - Conference Proceedings (pp. 110-114). UKR: IEEE Computer Society.
MLA:
Fediai, Artem, Dmytry Ryndyk, and Gianaurelio (Giovanni) Cuniberti. "Contact properties of ultrasmall carbon nanotube transistors from Ab-initio." Proceedings of the 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology, ELNANO 2014, UKR IEEE Computer Society, 2014. 110-114.
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