Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector

Shaygan M, Davami K, Kheirabi N, Baek CK, Cuniberti G, Meyyappand M, Lee JS (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Physical Chemistry Chemical Physics Royal Society of Chemistry

Book Volume: 16

Pages Range: 22687-22693

Journal Issue: 41

DOI: 10.1039/c4cp03322a

Abstract

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W-1), photoconductive gain (∼2.5 × 104%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications. © the Partner Organisations 2014.

Involved external institutions

Pohang University of Science and Technology (POSTECH) KR Korea, Republic of (KR) Technische Universität Dresden DE Germany (DE)

How to cite

APA:

Shaygan, M., Davami, K., Kheirabi, N., Baek, C.K., Cuniberti, G., Meyyappand, M., & Lee, J.-S. (2014). Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector. Physical Chemistry Chemical Physics, 16(41), 22687-22693. https://dx.doi.org/10.1039/c4cp03322a

MLA:

Shaygan, Mehrdad, et al. "Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector." Physical Chemistry Chemical Physics 16.41 (2014): 22687-22693.

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