Two dimensional materials beyond MoS2: Noble-transition-metal dichalcogenides

Miro P, Ghorbani-Asl M, Heine T (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Angewandte Chemie International Edition Wiley

Book Volume: 53

Pages Range: 3015-3018

Journal Issue: 11

DOI: 10.1002/anie.201309280

Abstract

The structure and electronic structure of layered noble-transition-metal dichalcogenides MX2 (M=Pt and Pd, and chalcogenides X=S, Se, and Te) have been investigated by periodic density functional theory (DFT) calculations. The MS2 monolayers are indirect band-gap semiconductors whereas the MSe2 and MTe2 analogues show significantly smaller band gap and can even become semimetallic or metallic materials. Under mechanical strain these MX2 materials become quasi-direct band-gap semiconductors. The mechanical-deformation and electron-transport properties of these materials indicate their potential application in flexible nanoelectronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

Jacobs University Bremen gGmbH DE Germany (DE)

How to cite

APA:

Miro, P., Ghorbani-Asl, M., & Heine, T. (2014). Two dimensional materials beyond MoS2: Noble-transition-metal dichalcogenides. Angewandte Chemie International Edition, 53(11), 3015-3018. https://doi.org/10.1002/anie.201309280

MLA:

Miro, Pere, Mahdi Ghorbani-Asl, and Thomas Heine. "Two dimensional materials beyond MoS2: Noble-transition-metal dichalcogenides." Angewandte Chemie International Edition 53.11 (2014): 3015-3018.

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