Influence of Semiconductor Thickness and Molecular Weight on the Charge Transport of a Naphthalenediimide-Based Copolymer in Thin-Film Transistors

Karpov Y, Zhao W, Raguzin I, Beryozkina T, Bakulev V, Al-Hussein M, Haeussler L, Stamm M, Voit B, Facchetti A, Tkachov R, Kiriy A (2015)

Publication Type: Journal article, Review article

Publication year: 2015

Journal

ACS Applied Materials and Interfaces American Chemical Society

Book Volume: 7

Pages Range: 12478-12487

Journal Issue: 23

DOI: 10.1021/am507759u

Abstract

The N-type semiconducting polymer, P(NDI2OD-T2), with different molecular weights (MW = 23, 72, and 250 kg/mol) was used for the fabrication of field-effect transistors (FETs) with different semiconductor layer thicknesses. FETs with semiconductor layer thicknesses from ∼15 to 50 nm exhibit similar electron mobilities (μ's) of 0.2-0.45 cm2 V-1 s-1. Reduction of the active film thickness led to decreased values; however, FETs with ∼2 and ∼5 nm thick P(NDI2OD-T2) films still exhibit substantial μs of 0.01-0.02 and ∼10-4 cm2 V-1 s-1, respectively. Interestingly, the lowest molecular weight sample (P-23, MW ≈ 23 kg/mol, polydispersity index (PDI) = 1.9) exhibited higher the highest molecular weight sample (P-250, MW ≈ 250 kg/mol, PDI = 2.3) measured for thicker devices (15-50 nm). This is rather unusual behavior because typically charge carrier mobility increases with MW where improved grain-to-grain connectivity usually enhances transport events. We attribute this result to the high crystallinity of the lowest MW sample, as confirmed by differential scanning calorimetry and X-ray diffraction studies, which may (over)compensate for other effects.

Involved external institutions

Leibniz-Institut für Polymerforschung Dresden e. V. DE Germany (DE) Polyera Corp US United States (USA) (US) Ural Federal University B.N. Yeltsin RU Russian Federation (RU) University of Jordan JO Jordan (JO)

How to cite

APA:

Karpov, Y., Zhao, W., Raguzin, I., Beryozkina, T., Bakulev, V., Al-Hussein, M.,... Kiriy, A. (2015). Influence of Semiconductor Thickness and Molecular Weight on the Charge Transport of a Naphthalenediimide-Based Copolymer in Thin-Film Transistors. ACS Applied Materials and Interfaces, 7(23), 12478-12487. https://doi.org/10.1021/am507759u

MLA:

Karpov, Yevhen, et al. "Influence of Semiconductor Thickness and Molecular Weight on the Charge Transport of a Naphthalenediimide-Based Copolymer in Thin-Film Transistors." ACS Applied Materials and Interfaces 7.23 (2015): 12478-12487.

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