Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi1-xSbx)2Te3 Nanowires
Hamdou B, Gooth J, Boehnert T, Dorn A, Akinsinde L, Pippel E, Zierold R, Nielsch K (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 5
Article Number: 1500280
Journal Issue: 14
Involved external institutions
Universität Hamburg (UHH)
Germany (DE)
INL - International Iberian Nanotechnology Laboratory
Portugal (PT)
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics
Germany (DE)
Germany (DE)
INL - International Iberian Nanotechnology Laboratory
Portugal (PT)
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics
Germany (DE)
How to cite
APA:
Hamdou, B., Gooth, J., Boehnert, T., Dorn, A., Akinsinde, L., Pippel, E.,... Nielsch, K. (2015). Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi1-xSbx)2Te3 Nanowires. Advanced Energy Materials, 5(14). https://dx.doi.org/10.1002/aenm.201500280
MLA:
Hamdou, Bacel, et al. "Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi1-xSbx)2Te3 Nanowires." Advanced Energy Materials 5.14 (2015).
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