Hnida KE, Baessler S, Akinsinde L, Gooth J, Nielsch K, Socha RP, Laszcz A, Czerwinski A, Sulka GD (2015)
Publication Type: Journal article
Publication year: 2015
Book Volume: 26
Article Number: 285701
Journal Issue: 28
DOI: 10.1088/0957-4484/26/28/285701
InSb nanowire (NW) arrays were prepared by pulsed electrodeposition combined with a porous template technique. The resulting polycrystalline material has a stoichiometric composition (In:Sb = 1:1) and a high length-to-diameter ratio. Based on a combination of Fourier transform infrared spectroscopy (FTIR) analysis and field-effect measurements, the band gap, the charge carrier polarity, the carrier concentration, the mobility and the effective mass for the InSb NWs was investigated. In this preliminary work, a transition from p-type to n-type charge transport was observed when the InSb NWs were subjected to annealing.
APA:
Hnida, K.E., Baessler, S., Akinsinde, L., Gooth, J., Nielsch, K., Socha, R.P.,... Sulka, G.D. (2015). Tuning the polarity of charge transport in InSb nanowires via heat treatment. Nanotechnology, 26(28). https://doi.org/10.1088/0957-4484/26/28/285701
MLA:
Hnida, Katarzyna E., et al. "Tuning the polarity of charge transport in InSb nanowires via heat treatment." Nanotechnology 26.28 (2015).
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