Graphene flakes at the SiO2/organic-semiconductor interface for high-mobility field-effect transistors

Pathipati SR, Pavlica E, Parvez K, Feng X, Muellen K, Bratina G (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Organic Electronics Elsevier

Book Volume: 27

Pages Range: 221-226

DOI: 10.1016/j.orgel.2015.09.004

Abstract

We demonstrate that high-transconductance organic thin film transistors can be achieved by depositing electrochemically exfoliated graphene flakes at the gate-dielectric/organic semiconductor (OS) interface. This effect is applicable to both, solution processed, polymer-based and vacuum-evaporated small-molecule OS-based transistors. Poly(3-hexylthiophene) (P3HT) transistors exhibit a factor of seven higher charge carrier mobility, while pentacene transistors exhibit a fourfold increase in charge carrier mobility, if graphene flakes are present at the dielectric/OS interface.

Involved external institutions

University of Nova Gorica / Univerza v Novi Gorici SI Slovenia (SI) Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research DE Germany (DE) Technische Universität Dresden DE Germany (DE)

How to cite

APA:

Pathipati, S.R., Pavlica, E., Parvez, K., Feng, X., Muellen, K., & Bratina, G. (2015). Graphene flakes at the SiO2/organic-semiconductor interface for high-mobility field-effect transistors. Organic Electronics, 27, 221-226. https://doi.org/10.1016/j.orgel.2015.09.004

MLA:

Pathipati, Srinivasa Rao, et al. "Graphene flakes at the SiO2/organic-semiconductor interface for high-mobility field-effect transistors." Organic Electronics 27 (2015): 221-226.

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