Quantum anomalous hall effect in magnetic insulator heterostructure

Xu G, Wang J, Felser C, Qi XL, Zhang SC (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Nano Letters American Chemical Society

Book Volume: 15

Pages Range: 2019-2023

Journal Issue: 3

DOI: 10.1021/nl504871u

Abstract

On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3 /GdI2 superlattice.

Involved external institutions

Stanford University

United States (USA) (US) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids

Germany (DE)

How to cite

APA:

Xu, G., Wang, J., Felser, C., Qi, X.-L., & Zhang, S.-C. (2015). Quantum anomalous hall effect in magnetic insulator heterostructure. Nano Letters, 15(3), 2019-2023. https://doi.org/10.1021/nl504871u

MLA:

Xu, Gang, et al. "Quantum anomalous hall effect in magnetic insulator heterostructure." Nano Letters 15.3 (2015): 2019-2023.

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