Chemical disorder as an engineering tool for spin polarization in Mn3Ga -based Heusler systems

Chadov S, D'Souza SW, Wollmann L, Kiss J, Fecher GH, Felser C (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 91

Article Number: 094203

Journal Issue: 9

DOI: 10.1103/PhysRevB.91.094203

Abstract

Our study highlights spin-polarization mechanisms in metals by focusing on the mobilities of conducting electrons with different spins instead of their quantities. Here, we engineer electron mobility by applying chemical disorder induced by nonstoichiometric variations. As a practical example, we discuss the scheme that establishes such variations in tetragonal Mn3Ga Heusler material. We justify this approach using first-principles calculations of the spin-projected conductivity components based on the Kubo-Greenwood formalism. It follows that, in the majority of cases, even a small substitution of some other transition element instead of Mn may lead to a substantial increase in spin polarization along the tetragonal axis.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Chadov, S., D'Souza, S.W., Wollmann, L., Kiss, J., Fecher, G.H., & Felser, C. (2015). Chemical disorder as an engineering tool for spin polarization in Mn3Ga -based Heusler systems. Physical Review B - Condensed Matter and Materials Physics, 91(9). https://doi.org/10.1103/PhysRevB.91.094203

MLA:

Chadov, Stanislav, et al. "Chemical disorder as an engineering tool for spin polarization in Mn3Ga -based Heusler systems." Physical Review B - Condensed Matter and Materials Physics 91.9 (2015).

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