Linear magnetoresistance caused by mobility fluctuations in n -doped Cd3As2

Narayanan A, Watson MD, Blake SF, Bruyant N, Drigo L, Chen YL, Prabhakaran D, Yan B, Felser C, Kong T, Canfield PC, Coldea AI (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Physical Review Letters American Physical Society

Book Volume: 114

Article Number: 117201

Journal Issue: 11

DOI: 10.1103/PhysRevLett.114.117201

Abstract

Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g∼16).

Involved external institutions

University of Oxford GB United Kingdom (GB) National Center for Scientific Research / Centre national de la recherche scientifique (CNRS) FR France (FR) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) Iowa State University of Science and Technology (ISU) US United States (USA) (US)

How to cite

APA:

Narayanan, A., Watson, M.D., Blake, S.F., Bruyant, N., Drigo, L., Chen, Y.L.,... Coldea, A.I. (2015). Linear magnetoresistance caused by mobility fluctuations in n -doped Cd3As2. Physical Review Letters, 114(11). https://doi.org/10.1103/PhysRevLett.114.117201

MLA:

Narayanan, Arjun, et al. "Linear magnetoresistance caused by mobility fluctuations in n -doped Cd3As2." Physical Review Letters 114.11 (2015).

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