A scheme for spin-selective electron localization in Mn3Ga Heusler material

Wollmann L, Fecher GH, Chadov S, Felser C (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Journal of Physics D: Applied Physics IOP Publishing: Hybrid Open Access

Book Volume: 48

Article Number: 164004

Journal Issue: 16

DOI: 10.1088/0022-3727/48/16/164004

Abstract

We demonstrate that tetragonal Mn3Ga Heusler material allows for a new possibility of adjusting an electric current by means of the so-called spin-selective localization of conduction electrons. On the basis of a first-principles analysis, we propose possible chemical substitutes for Mn, which, when used in small quantities, can lead to a disorder-induced localization of the conduction electrons in a single spin channel. Replacement of the Mn in Mn3-xYxGa with other 3d transition metals Y is known not to change the tetragonal structure for a certain range of x. For Y = Co the range is x ≤ 0.5. Therefore, substitution of Co for Mn is used in the present work as a prototype procedure for a detailed demonstration of the underlying physical mechanisms.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Wollmann, L., Fecher, G.H., Chadov, S., & Felser, C. (2015). A scheme for spin-selective electron localization in Mn3Ga Heusler material. Journal of Physics D: Applied Physics, 48(16). https://doi.org/10.1088/0022-3727/48/16/164004

MLA:

Wollmann, Lukas, et al. "A scheme for spin-selective electron localization in Mn3Ga Heusler material." Journal of Physics D: Applied Physics 48.16 (2015).

BibTeX: Download