Microfluidic alignment and trapping of 1D nanostructures-a simple fabrication route for single-nanowire field effect transistors
Gang A, Haustein N, Baraban L, Weber WM, Mikolajick T, Thiele J, Cuniberti G (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 5
Pages Range: 94702-94706
Journal Issue: 115
DOI: 10.1039/c5ra20414c
Abstract
We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(ii) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.
Involved external institutions
Germany (DE)How to cite
APA:
Gang, A., Haustein, N., Baraban, L., Weber, W.M., Mikolajick, T., Thiele, J., & Cuniberti, G. (2015). Microfluidic alignment and trapping of 1D nanostructures-a simple fabrication route for single-nanowire field effect transistors. RSC Advances, 5(115), 94702-94706. https://dx.doi.org/10.1039/c5ra20414c
MLA:
Gang, A., et al. "Microfluidic alignment and trapping of 1D nanostructures-a simple fabrication route for single-nanowire field effect transistors." RSC Advances 5.115 (2015): 94702-94706.
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