Electrical characteristics of the carbon nanotube field-effect transistors with extended contacts obtained within ab-initio based model
Fediai A, Ryndyk DA, Cuniberti G (2015)
Publication Type: Conference contribution
Publication year: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 261-268
Conference Proceedings Title: 2015 IEEE 35th International Conference on Electronics and Nanotechnology, ELNANO 2015 - Conference Proceedings
Event location: Kyiv, UKR
ISBN: 9781467365345
DOI: 10.1109/ELNANO.2015.7146888
Abstract
In our previous work the model of the electron transport in CNTFETs with extended contacts was developed for equilibrium case using combination of the density-functional theory and equilibrium Green functions formalism. Here we extrapolate it to the case of the arbitrary biased CNTFET using simplest thinkable assumptions, which allows us to calculate drain current as a function of the gate and drain potentials. For Al and Pd electrodes we show qualitative agreement of our model with the existing experimental results both in terms of polarity of the device (p- or n-type FET) and dependence on the contact length. Most of the prediction justified by experimental data were done at ab-initio level for the first time.
Involved external institutions
Germany (DE)How to cite
APA:
Fediai, A., Ryndyk, D.A., & Cuniberti, G. (2015). Electrical characteristics of the carbon nanotube field-effect transistors with extended contacts obtained within ab-initio based model. In 2015 IEEE 35th International Conference on Electronics and Nanotechnology, ELNANO 2015 - Conference Proceedings (pp. 261-268). Kyiv, UKR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Fediai, Artem, Dmitry A. Ryndyk, and Gianaurelio (Giovanni) Cuniberti. "Electrical characteristics of the carbon nanotube field-effect transistors with extended contacts obtained within ab-initio based model." Proceedings of the 2015 35th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2015, Kyiv, UKR Institute of Electrical and Electronics Engineers Inc., 2015. 261-268.
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