Liao Z, Zhang T, Gall M, Dianat A, Rosenkranz R, Jordan R, Cuniberti G, Zschech E (2015)
Publication Type: Journal article
Publication year: 2015
Book Volume: 107
Article Number: 013108
Journal Issue: 1
DOI: 10.1063/1.4926647
Raman mapping is performed to study the lateral damage in supported monolayer graphene carved by 30keV focused Ga+ beams. The evolution of the lateral damage is tracked based on the profiles of the intensity ratio between the D (1341cm-1) and G (1582cm-1) peaks (I
APA:
Liao, Z., Zhang, T., Gall, M., Dianat, A., Rosenkranz, R., Jordan, R.,... Zschech, E. (2015). Lateral damage in graphene carved by high energy focused gallium ion beams. Applied Physics Letters, 107(1). https://doi.org/10.1063/1.4926647
MLA:
Liao, Zhongquan, et al. "Lateral damage in graphene carved by high energy focused gallium ion beams." Applied Physics Letters 107.1 (2015).
BibTeX: Download