Jeon DY, Pregl S, Park SJ, Baraban L, Cuniberti G, Mikolajick T, Weber WM (2015)
Publication Type: Journal article
Publication year: 2015
Book Volume: 15
Pages Range: 4578-4584
Journal Issue: 7
DOI: 10.1021/acs.nanolett.5b01188
Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted from the channel length scaling based method. Especially, the newly suggested current-voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi
APA:
Jeon, D.-Y., Pregl, S., Park, S.J., Baraban, L., Cuniberti, G., Mikolajick, T., & Weber, W.M. (2015). Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires. Nano Letters, 15(7), 4578-4584. https://dx.doi.org/10.1021/acs.nanolett.5b01188
MLA:
Jeon, Dae-Young, et al. "Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires." Nano Letters 15.7 (2015): 4578-4584.
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