Ma Y, Dai Y, Kou L, Frauenheim T, Heine T (2015)
Publication Type: Journal article
Publication year: 2015
Book Volume: 15
Pages Range: 1083-1089
Journal Issue: 2
DOI: 10.1021/nl504037u
One of the major obstacles to a wide application range of the quantum spin Hall (QSH) effect is the lack of suitable QSH insulators with a large bulk gap. By means of first-principles calculations including relativistic effects, we predict that methyl-functionalized bismuth, antimony, and lead bilayers (Me-Bi, Me-Sb, and Me-Pb) are 2D topological insulators (TIs) with protected Dirac type topological helical edge states, and thus suitable QSH systems. In addition to the explicitly obtained topological edge states, the nontrivial topological characteristic of these systems is confirmed by the calculated nontrivial Z
APA:
Ma, Y., Dai, Y., Kou, L., Frauenheim, T., & Heine, T. (2015). Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony, and lead bilayer films. Nano Letters, 15(2), 1083-1089. https://doi.org/10.1021/nl504037u
MLA:
Ma, Yandong, et al. "Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony, and lead bilayer films." Nano Letters 15.2 (2015): 1083-1089.
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