Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers

Ma Y, Li X, Kou L, Yan B, Niu C, Dai Y, Heine T (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Physical Review B - Condensed Matter and Materials Physics American Physical Society (APS)

Book Volume: 91

Article Number: 235306

Journal Issue: 23

DOI: 10.1103/PhysRevB.91.235306

Abstract

The search for inversion-asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so far only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps, which are well above room temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ∼1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures, Z2 topological invariants, and an explicit demonstration of the topological edge states. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications.

Involved external institutions

Jacobs University Bremen gGmbH DE Germany (DE) University of Texas at Austin US United States (USA) (US) University of New South Wales (UNSW) AU Australia (AU) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) Shandong-University (SDU) CN China (CN)

How to cite

APA:

Ma, Y., Li, X., Kou, L., Yan, B., Niu, C., Dai, Y., & Heine, T. (2015). Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers. Physical Review B - Condensed Matter and Materials Physics, 91(23). https://doi.org/10.1103/PhysRevB.91.235306

MLA:

Ma, Yandong, et al. "Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers." Physical Review B - Condensed Matter and Materials Physics 91.23 (2015).

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