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On the stability and electronic structure of transition-metal dichalcogenide monolayer alloys Mo1-xXxS2-ySey with X = W, Nb

Kuc A, Heine T (2015)

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Publication Type: Journal article

Publication year: 2015

Journal

Book Volume: 5

Journal Issue: 1

DOI: 10.3390/electronics5010001

Abstract

Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easily modified by various means. Here, we have investigated how the stability and electronic structure of MoS2 monolayers is influenced by alloying, i.e., by substitution of the transition metal Mo by W and Nb and of the chalcogen S by Se. While W and Se incorporate into the MoS2 matrix homogeneously, forming solid solutions, the incorporation of Nb is energetically unstable and results in phase separation. However, all three alloying atoms change the electronic band structure significantly. For example, a very small concentration of Nb atoms introduces localized metallic states, while Mo1-xWxS2 and MoS2-ySey alloys exhibit spin-splitting of the valence band of strength that is in between that of the pure materials. Moreover, small, but evident spin-splitting is introduced in the conduction band due to the symmetry breaking. Therefore, transition-metal dichalcogenide alloys are interesting candidates for optoelectronic and spintronic applications.

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How to cite

APA:

Kuc, A., & Heine, T. (2015). On the stability and electronic structure of transition-metal dichalcogenide monolayer alloys Mo1-xXxS2-ySey with X = W, Nb. Electronics, 5(1). https://doi.org/10.3390/electronics5010001

MLA:

Kuc, Agnieszka, and Thomas Heine. "On the stability and electronic structure of transition-metal dichalcogenide monolayer alloys Mo1-xXxS2-ySey with X = W, Nb." Electronics 5.1 (2015).

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