Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Hnida KE, Baessler S, Mech J, Szacilowski K, Socha RP, Gajewska M, Nielsch K, Przybylski M, Sulka GD (2016)

Publication Type: Journal article

Publication year: 2016

Journal

Journal of Materials Chemistry C Royal Society of Chemistry

Book Volume: 4

Pages Range: 1345-1350

Journal Issue: 6

DOI: 10.1039/c5tc03656a

Abstract

We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).

Involved external institutions

University of Science and Technology (AGH) / Akademia Górniczo-Hutnicza PL Poland (PL) Universität Hamburg (UHH) DE Germany (DE) Polska Akademia Nauk (PAN) / Polish Academy of Sciences PL Poland (PL) Jagiellonian University / Uniwersytet Jagielloński (UJ) PL Poland (PL)

How to cite

APA:

Hnida, K.E., Baessler, S., Mech, J., Szacilowski, K., Socha, R.P., Gajewska, M.,... Sulka, G.D. (2016). Electrochemically deposited nanocrystalline InSb thin films and their electrical properties. Journal of Materials Chemistry C, 4(6), 1345-1350. https://doi.org/10.1039/c5tc03656a

MLA:

Hnida, K. E., et al. "Electrochemically deposited nanocrystalline InSb thin films and their electrical properties." Journal of Materials Chemistry C 4.6 (2016): 1345-1350.

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