High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

Candini A, Martini L, Chen Z, Mishra N, Convertino D, Coletti C, Narita A, Feng X, Muellen K, Affronte M (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 121

Pages Range: 10620-10625

Journal Issue: 19

DOI: 10.1021/acs.jpcc.7b03401

Abstract

Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 × 105 A/W for small incident power in the visible-UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.

Involved external institutions

How to cite

APA:

Candini, A., Martini, L., Chen, Z., Mishra, N., Convertino, D., Coletti, C.,... Affronte, M. (2017). High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes. Journal of Physical Chemistry C, 121(19), 10620-10625. https://doi.org/10.1021/acs.jpcc.7b03401

MLA:

Candini, Andrea, et al. "High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes." Journal of Physical Chemistry C 121.19 (2017): 10620-10625.

BibTeX: Download