Llinas JP, Fairbrother A, Barin GB, Shi W, Lee K, Wu S, Choi BY, Braganza R, Lear J, Kau N, Choi W, Chen C, Pedramrazi Z, Dumslaff T, Narita A, Feng X, Muellen K, Fischer F, Zettl A, Ruffieux P, Yablonovitch E, Crommie M, Fasel R, Bokor J (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 8
Article Number: 633
Journal Issue: 1
DOI: 10.1038/s41467-017-00734-x
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L
APA:
Llinas, J.P., Fairbrother, A., Barin, G.B., Shi, W., Lee, K., Wu, S.,... Bokor, J. (2017). Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. Nature Communications, 8(1). https://doi.org/10.1038/s41467-017-00734-x
MLA:
Llinas, Juan Pablo, et al. "Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons." Nature Communications 8.1 (2017).
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