Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)

Deniz O, Sanchez-Sanchez C, Jaafar R, Kharche N, Liang L, Meunier V, Feng X, Muellen K, Fasel R, Ruffieux P (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Chemical Communications Royal Society of Chemistry

Book Volume: 54

Pages Range: 1619-1622

Journal Issue: 13

DOI: 10.1039/c7cc08353j

Abstract

Electronic and thermal properties of chevron-type graphene nanoribbons can be widely tuned, making them interesting candidates for electronic and thermoelectric applications. Here, we use post-growth silicon intercalation to unambiguously access nanoribbons' energy position of their electronic frontier states. These are otherwise obscured by substrate effects when investigated directly on the growth substrate. In agreement with first-principles calculations we find a band gap of 2.4 eV.

Involved external institutions

Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa) / Swiss Federal Laboratories for Materials Science & Technology CH Switzerland (CH) Rensselaer Polytechnic Institute (RPI) US United States (USA) (US) Oak Ridge National Laboratory US United States (USA) (US) Technische Universität Dresden DE Germany (DE) Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research DE Germany (DE)

How to cite

APA:

Deniz, O., Sanchez-Sanchez, C., Jaafar, R., Kharche, N., Liang, L., Meunier, V.,... Ruffieux, P. (2018). Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111). Chemical Communications, 54(13), 1619-1622. https://doi.org/10.1039/c7cc08353j

MLA:

Deniz, Okan, et al. "Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)." Chemical Communications 54.13 (2018): 1619-1622.

BibTeX: Download