Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene
Heidler J, Yang S, Feng X, Muellen K, Asadi K (2018)
Publication Type: Journal article
Publication year: 2018
Journal
Book Volume: 144
Pages Range: 90-94
DOI: 10.1016/j.sse.2018.03.008
Abstract
Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.
Involved external institutions
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research
Germany (DE)
Technische Universität Dresden
Germany (DE)
Germany (DE)
Technische Universität Dresden
Germany (DE)
How to cite
APA:
Heidler, J., Yang, S., Feng, X., Muellen, K., & Asadi, K. (2018). Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene. Solid-State Electronics, 144, 90-94. https://doi.org/10.1016/j.sse.2018.03.008
MLA:
Heidler, Jonas, et al. "Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene." Solid-State Electronics 144 (2018): 90-94.
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