Neuromorphic hybrid systems based on polarizable thin film-coated silicon nanowire field-effect transistors

Panes-Ruiz LA, Ibarlucea B, Baek E, Park SW, Baek CK, Feng X, Cuniberti G (2021)

Publication Type: Conference contribution

Publication year: 2021

Publisher: IEEE Computer Society

Book Volume: 2021-September

Conference Proceedings Title: International Workshop on Cellular Nanoscale Networks and their Applications

Event location: Catania, ITA

ISBN: 9781665439480

DOI: 10.1109/CNNA49188.2021.9610819

Abstract

We present two approaches for the development of hybrid neurotransistors based on the combination of polarizable thin films on silicon nanowires field-effect transistors for the emulation of signal processing by neurons. The polarizing properties of the films coming from the ion redistribution under bias voltage provide the systems with a memristive behavior needed to achieve the neuronal intrinsic plasticity using ionic migration in the neuron membrane at a hardware level.

Involved external institutions

Technische Universität Dresden DE Germany (DE) Tsinghua University CN China (CN) Pohang University of Science and Technology (POSTECH) KR Korea, Republic of (KR)

How to cite

APA:

Panes-Ruiz, L.A., Ibarlucea, B., Baek, E., Park, S.W., Baek, C.K., Feng, X., & Cuniberti, G. (2021). Neuromorphic hybrid systems based on polarizable thin film-coated silicon nanowire field-effect transistors. In International Workshop on Cellular Nanoscale Networks and their Applications. Catania, ITA: IEEE Computer Society.

MLA:

Panes-Ruiz, Luis Antonio, et al. "Neuromorphic hybrid systems based on polarizable thin film-coated silicon nanowire field-effect transistors." Proceedings of the 17th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2021, Catania, ITA IEEE Computer Society, 2021.

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