Sun B, Pang J, Cheng Q, Zhang S, Li Y, Zhang C, Sun D, Ibarlucea B, Li Y, Chen D, Fan H, Han Q, Chao M, Liu H, Wang J, Cuniberti G, Han L, Zhou W (2021)
Publication Type: Journal article, Review article
Publication year: 2021
Book Volume: 6
Article Number: 2000744
Journal Issue: 7
The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer-scale, which is compatible with the Si-based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer-scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer-scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch-to-batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO
APA:
Sun, B., Pang, J., Cheng, Q., Zhang, S., Li, Y., Zhang, C.,... Zhou, W. (2021). Synthesis of Wafer-Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications. Advanced Materials Technologies, 6(7). https://doi.org/10.1002/admt.202000744
MLA:
Sun, Baojun, et al. "Synthesis of Wafer-Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications." Advanced Materials Technologies 6.7 (2021).
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