Core–Shell Structures Prepared by Atomic Layer Deposition on GaAs Nanowires

Ursaki VV, Lehmann S, Zalamai VV, Morari V, Nielsch K, Tiginyanu IM, Monaico EV (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Crystals MDPI

Book Volume: 12

Article Number: 1145

Journal Issue: 8

DOI: 10.3390/cryst12081145

Abstract

GaAs nanowire arrays have been prepared by anodization of GaAs substrates. The nanowires produced on (111)B GaAs substrates were found to be oriented predominantly perpendicular to the substrate surface. The prepared nanowire arrays have been coated with thin ZnO or TiO2 layers by means of thermal atomic layer deposition (ALD), thus coaxial core–shell hybrid structures are being fabricated. The hybrid structures have been characterized by scanning electron microscopy (SEM) for the morphology investigations, by Energy Dispersive X-ray (EDX) and X-ray diffraction (XRD) analysis for the composition and crystal structure assessment, and by photoluminescence (PL) spectroscopy for obtaining an insight on emission polarization related to different recombination channels in the prepared core–shell structures.

Involved external institutions

Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden

Germany (DE) Technical University of Moldova

Moldova, Republic of (MD) Ghitu Institute of Electronic Engineering and Nanotechnologies

Moldova, Republic of (MD)

How to cite

APA:

Ursaki, V.V., Lehmann, S., Zalamai, V.V., Morari, V., Nielsch, K., Tiginyanu, I.M., & Monaico, E.V. (2022). Core–Shell Structures Prepared by Atomic Layer Deposition on GaAs Nanowires. Crystals, 12(8). https://doi.org/10.3390/cryst12081145

MLA:

Ursaki, Veaceslav V., et al. "Core–Shell Structures Prepared by Atomic Layer Deposition on GaAs Nanowires." Crystals 12.8 (2022).

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