Bergmann L, Pobegen G, Schlogl D, Schulze H, Weber HB, Krieger M (2022)
Publication Type: Conference contribution
Publication year: 2022
Publisher: Institute of Electrical and Electronics Engineers Inc.
Book Volume: 2022-May
Pages Range: 221-224
Conference Proceedings Title: Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISBN: 9781665422017
DOI: 10.1109/ISPSD49238.2022.9813648
A new, simplified, and more versatile current transient spectroscopy (CTS) measurement setup is demonstrated. With this setup, the depth profile of the platinum-hydrogen (PtH) defect in fully processed silicon high-voltage (HV) test diodes is investigated. It is shown that a proton field stop (FS) at the backside of these test devices suppresses the in-diffusion of hydrogen (H) leading to a significant reduction of the PtH defect concentration throughout the entire volume of the diode. Furthermore, a strong correlation of the depth profile of the PtH defect and the leakage current is observed. Thus, we conclude that the PtH defect is the main generation center in the investigated devices.
APA:
Bergmann, L., Pobegen, G., Schlogl, D., Schulze, H., Weber, H.B., & Krieger, M. (2022). Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 221-224). Vancouver, BC, CA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Bergmann, Lena, et al. "Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy." Proceedings of the 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Vancouver, BC Institute of Electrical and Electronics Engineers Inc., 2022. 221-224.
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