High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

Tessarek C, Sarau G, Kiometzis M, Christiansen S (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Optics Express Optical Society of America

Book Volume: 21

Pages Range: 2733-2740

Journal Issue: 3

DOI: 10.1364/OE.21.002733

Abstract

Self-assembled GaN rods were grown on sapphire by metalorganic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo-and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods. © 2012 Optical Society of America.

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Tessarek, C., Sarau, G., Kiometzis, M., & Christiansen, S. (2013). High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy. Optics Express, 21(3), 2733-2740. https://doi.org/10.1364/OE.21.002733

MLA:

Tessarek, Christian, et al. "High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy." Optics Express 21.3 (2013): 2733-2740.

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