Cathodoluminescence properties of β-Ga2O3 nanowires grown using CVD technique
Kumar S, Tessarek C, Christiansen SH, Singh R (2013)
Publication Type: Conference contribution
Publication year: 2013
Journal
Book Volume: 1512
Pages Range: 336-337
Conference Proceedings Title: AIP Conference Proceedings
ISBN: 9780735411333
DOI: 10.1063/1.4791048
Abstract
We report about cathodoluminescence (CL) properties of β-Ga 2O3 nanowires grown on sapphire substrate with gold as catalyst using chemical vapor deposition (CVD) technique. The morphology of grown nanowires were characterized by scanning electron microscopy (SEM) and the diameter of the nanowires (NWs) was ranging between 300 to 500 nm and length was up to many micrometers. The luminescent properties of nanowires were obtained by CL technique. The strong UV emission was observed in CL spectra centered at 3.15 eV (394 nm). © 2013 American Institute of Physics.
Involved external institutions
Indian Institute of Technology Bombay
India (IN)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
India (IN)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Kumar, S., Tessarek, C., Christiansen, S.H., & Singh, R. (2013). Cathodoluminescence properties of β-Ga2O3 nanowires grown using CVD technique. In AIP Conference Proceedings (pp. 336-337).
MLA:
Kumar, Sudheer, et al. "Cathodoluminescence properties of β-Ga2O3 nanowires grown using CVD technique." Proceedings of the 57th DAE Solid State Physics Symposium 2012 2013. 336-337.
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