Characterization of gan nanorods fabricated using ni nanomasking and reactive ion etching: A top-down approach
Kumar A, Latzel M, Tessarek C, Christiansen S, Singh R (2013)
Publication Type: Journal article
Publication year: 2013
Journal
Book Volume: 5
Article Number: 02001
Journal Issue: 2
Abstract
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence. © 2013 Sumy State University.
Involved external institutions
Indian Institute of Technology (IIT), Delhi
India (IN)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
India (IN)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Kumar, A., Latzel, M., Tessarek, C., Christiansen, S., & Singh, R. (2013). Characterization of gan nanorods fabricated using ni nanomasking and reactive ion etching: A top-down approach. Journal of Nano- and Electronic Physics, 5(2).
MLA:
Kumar, Ashutosh, et al. "Characterization of gan nanorods fabricated using ni nanomasking and reactive ion etching: A top-down approach." Journal of Nano- and Electronic Physics 5.2 (2013).
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