Inverted silicon nanocones for a next generation of silicon-based optoelectronics
Schmitt SW, Sarau G, Göbelt M, Christiansen S (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: OSA - The Optical Society
Conference Proceedings Title: Optics InfoBase Conference Papers
Event location: Leipzig, DEU
ISBN: 9780960038046
Abstract
The study introduces a novel type of photonic structure, the inverted silicon nanocone (SiNC). It exhibits a unique photonic mode formation, and permits the design of novel Si-based optoelectronic devices such as solar cells LEDs or optical sensors.
Involved external institutions
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Schmitt, S.W., Sarau, G., Göbelt, M., & Christiansen, S. (2014). Inverted silicon nanocones for a next generation of silicon-based optoelectronics. In Optics InfoBase Conference Papers. Leipzig, DEU: OSA - The Optical Society.
MLA:
Schmitt, Sebastian W., et al. "Inverted silicon nanocones for a next generation of silicon-based optoelectronics." Proceedings of the Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016, Leipzig, DEU OSA - The Optical Society, 2014.
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