Theoretical energy yield of GaAs-on-Si tandem solar cells

Liu H, Ren Z, Liu Z, Brandt RE, Mailoa JP, Siah SC, Aberle AG, Buonassisi T, Peters IM (2014)

Publication Type: Conference contribution

Publication year: 2014

Journal

Materials Research Society Symposium - Proceedings Materials Research Society

Publisher: Materials Research Society

Book Volume: 1638

Conference Proceedings Title: Materials Research Society Symposium Proceedings

Event location: USA

DOI: 10.1557/opl.2014.195

Abstract

III-V on Si multijunction solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs/Si tandem solar cells is performed to assess the performance potential and sensitivity to spectral variations. Recorded time-dependent spectral irradiance data in two locations (Singapore and Denver) were used. We found that a 4-terminal contact scheme with thick top cell confers distinctive advantages over a 2-terminal scheme, giving a yield potential 21% higher than the 2-terminal scheme in Singapore and 17% higher in Denver. The theoretical energy yield benefit of a 4-terminal device emphasizes the need for further technology development in this design space. Copyright © 2014 Materials Research Society.

Involved external institutions

National University of Singapore (NUS) SG Singapore (SG) Singapore-MIT Alliance for Research and Technology (SMART) SG Singapore (SG) Massachusetts Institute of Technology (MIT) US United States (USA) (US)

How to cite

APA:

Liu, H., Ren, Z., Liu, Z., Brandt, R.E., Mailoa, J.P., Siah, S.C.,... Peters, I.M. (2014). Theoretical energy yield of GaAs-on-Si tandem solar cells. In Materials Research Society Symposium Proceedings. USA: Materials Research Society.

MLA:

Liu, Haohui, et al. "Theoretical energy yield of GaAs-on-Si tandem solar cells." Proceedings of the 2013 MRS Fall Meeting, USA Materials Research Society, 2014.

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