Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples
Ma FJ, Hameiri Z, Samudra GS, Peters M, Hoex B (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 3313-3316
Conference Proceedings Title: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Event location: Denver, CO, USA
ISBN: 9781479943982
DOI: 10.1109/PVSC.2014.6925643
Abstract
Effective minority carrier lifetime reduction at low injection levels is observed on 125 mm undiffused lifetime samples whose surfaces are under inversion due to field-effect passivation. With numerical analysis, we show that edge recombination is insufficient to account for this phenomenon on these samples. Between surface damage and asymmetric bulk lifetimes mechanisms that can account for the reduction, surface damage is confirmed to be more plausible. We demonstrate that the measured effective lifetime curves can be well reproduced assuming surface damage, a 700 nm thin layer with much lower bulk lifetimes, with numerical simulation.
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Singapore (SG)How to cite
APA:
Ma, F.J., Hameiri, Z., Samudra, G.S., Peters, M., & Hoex, B. (2014). Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3313-3316). Denver, CO, USA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Ma, Fa Jun, et al. "Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples." Proceedings of the 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, CO, USA Institute of Electrical and Electronics Engineers Inc., 2014. 3313-3316.
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