Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

Tessarek C, Goldhahn R, Sarau G, Heilmann M, Christiansen S (2015)

Publication Type: Journal article

Publication year: 2015

Journal

New Journal of Physics Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft

Book Volume: 17

Article Number: 083047

Journal Issue: 8

DOI: 10.1088/1367-2630/17/8/083047

Abstract

Vertical oriented GaN microrods were grown by metal-organic vapor phase epitaxy with four different n-type carrier concentration sections above 1019 cm-3 along the c-axis. In cathodoluminescence investigations carried out on each section of the microrod, whispering gallery modes can be observed due to the hexagonal symmetry. Comparisons of the spectral positions of the modes from each section show the presence of an energy dependent mode shift, which suggest a carrier-induced refractive index change. The shift of the high energy edge of the near band edge emission points out that the band gap parameter in the analytical expression of the refractive index has to be modified. A proper adjustment of the band gap parameter explains the observed whispering gallery mode shift.

Involved external institutions

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE) Otto-von-Guericke-Universität Magdeburg DE Germany (DE) Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Tessarek, C., Goldhahn, R., Sarau, G., Heilmann, M., & Christiansen, S. (2015). Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods. New Journal of Physics, 17(8). https://doi.org/10.1088/1367-2630/17/8/083047

MLA:

Tessarek, Christian, et al. "Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods." New Journal of Physics 17.8 (2015).

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