The realistic energy yield potential of GaAs-on-Si tandem solar cells: A theoretical case study

Liu H, Ren Z, Liu Z, Aberle AG, Buonassisi T, Peters IM (2015)


Publication Type: Journal article

Publication year: 2015

Journal

Book Volume: 23

Pages Range: A382-A390

Journal Issue: 7

DOI: 10.1364/OE.23.00A382

Abstract

Si based tandem solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs on Si (GaAs/Si) tandem solar cells is performed to assess their energy yield potential under realistic illumination conditions with varying spectrum. We find that the yield of a 4-terminal contact scheme with thick top cell is more than 15% higher than for a 2-terminal scheme. Furthermore, we quantify the main losses that occur for this type of solar cell under varying spectra. Apart from current mismatch, we find that a significant power loss can be attributed to low irradiance seen by the sub-cells. The study shows that despite non-optimal bandgap combination, GaAs/Si tandem solar cells have the potential to surpass 30% energy conversion efficiency.

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How to cite

APA:

Liu, H., Ren, Z., Liu, Z., Aberle, A.G., Buonassisi, T., & Peters, I.M. (2015). The realistic energy yield potential of GaAs-on-Si tandem solar cells: A theoretical case study. Optics Express, 23(7), A382-A390. https://doi.org/10.1364/OE.23.00A382

MLA:

Liu, Haohui, et al. "The realistic energy yield potential of GaAs-on-Si tandem solar cells: A theoretical case study." Optics Express 23.7 (2015): A382-A390.

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