Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy
Chen W, Wen X, Latzel M, Yang J, Huang S, Shrestha S, Patterson R, Christiansen S, Conibeer G (2017)
Publication Type: Conference contribution
Publication year: 2017
Journal
Publisher: SPIE
Book Volume: 10104
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: San Francisco, CA, USA
ISBN: 9781510606494
DOI: 10.1117/12.2249931
Abstract
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.
Involved external institutions
University of New South Wales (UNSW)
Australia (AU)
Swinburne University of Technology
Australia (AU)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Australia (AU)
Swinburne University of Technology
Australia (AU)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Chen, W., Wen, X., Latzel, M., Yang, J., Huang, S., Shrestha, S.,... Conibeer, G. (2017). Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy. In Jen-Inn Chyi, Jong-In Shim, Hiroshi Fujioka, Ulrich T. Schwarz, Hadis Morkoc, Yasushi Nanishi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. San Francisco, CA, USA: SPIE.
MLA:
Chen, Weijian, et al. "Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy." Proceedings of the Gallium Nitride Materials and Devices XII, San Francisco, CA, USA Ed. Jen-Inn Chyi, Jong-In Shim, Hiroshi Fujioka, Ulrich T. Schwarz, Hadis Morkoc, Yasushi Nanishi, SPIE, 2017.
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