Jaeckle S, Liebhaber M, Gersmann C, Mews M, Jaeger K, Christiansen S, Lips K (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 7
Article Number: 2170
Journal Issue: 1
DOI: 10.1038/s41598-017-01946-3
We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (v
APA:
Jaeckle, S., Liebhaber, M., Gersmann, C., Mews, M., Jaeger, K., Christiansen, S., & Lips, K. (2017). Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells. Scientific Reports, 7(1). https://doi.org/10.1038/s41598-017-01946-3
MLA:
Jaeckle, Sara, et al. "Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells." Scientific Reports 7.1 (2017).
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