Room Temperature Hydrogen Gas Sensing Using Zn2TiO4Thin Film

Kerketta U, Daniel TT, Yadav VKS, Paily RP (2023)

Publication Type: Journal article

Publication year: 2023

Journal

IEEE Sensors Letters IEEE

Book Volume: 7

Article Number: 2000204

Journal Issue: 2

DOI: 10.1109/LSENS.2023.3241312

Abstract

Zn2TiO4 thin film is formed on Si/SiO2 substrate by a spin coating process and Al is used as electrodes. This device has excellent hydrogen (H2) gas sensing properties. The phase and crystal structure of the thin film was studied using X-ray diffraction. The sensor responds linearly at room temperature to H2 gas concentrations ranging from 50 to 250 ppm and shows a good sensitivity toward low ppm of H2. The response time of the sensor is about 76 s at 250-ppm H2. We could fit the sensor response to the Langmuir adsorption model.

Authors with CRIS profile

Ujjaval Kerketta Lehrstuhl für Werkstoffwissenschaften (Korrosion und Oberflächentechnik)

Involved external institutions

Indian Institute of Technology Guwahati IN India (IN) Birla Institute of Technology, Mesra (BIT Mesra) / बिरला प्रौद्योगिकी संस्थान IN India (IN)

How to cite

APA:

Kerketta, U., Daniel, T.T., Yadav, V.K.S., & Paily, R.P. (2023). Room Temperature Hydrogen Gas Sensing Using Zn2TiO4Thin Film. IEEE Sensors Letters, 7(2). https://doi.org/10.1109/LSENS.2023.3241312

MLA:

Kerketta, Ujjaval, et al. "Room Temperature Hydrogen Gas Sensing Using Zn2TiO4Thin Film." IEEE Sensors Letters 7.2 (2023).

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