Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer
Seidel L, Schafer S, Oehme M, Buca D, Capellini G, Schulze J, Schwarz D (2022)
Publication Type: Conference contribution
Publication year: 2022
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 165-168
Conference Proceedings Title: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings
Event location: Milan, ITA
ISBN: 9781665484947
DOI: 10.1109/ESSCIRC55480.2022.9911458
Abstract
We present the growth, fabrication, and characterization of a Ge1-ySny pin-diode and a SixGe1-x-ySny / Ge1-ySny pin-diode. The pin-diodes are grown by molecular beam epitaxy on a partially relaxed Ge1-ySny buffer grown by reduce-pressure chemical vapor deposition. The analysis of the crystal shows that the Ge1-ySny pin-diode is lattice-matched grown and the SixGe1-x-ySny / Ge1-ySny pin-diode is pseudomorphic grown with respect to the buffer. Temperaturedependent direct current measurements reveal a threshold voltage shift from 0.3 V to 0.55 V and a series resistance that shows metallic behavior. Furthermore, by comparing the electroluminescence spectra at 13.4 K and 293 K we observe a 10 times higher signal for the Ge1-ySny pin-diode and a 3 times higher signal for the SixGe1-x-ySny / Ge1-ySny pin-diode at cryogenic temperatures. The peak energies at an injection current density of 2.5 kA/cm2 are 575 meV and 610 meV, respectively.
Authors with CRIS profile
Involved external institutions
Universität Stuttgart
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Forschungszentrum Jülich / Research Centre Jülich (FZJ)
Germany (DE)
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Forschungszentrum Jülich / Research Centre Jülich (FZJ)
Germany (DE)
How to cite
APA:
Seidel, L., Schafer, S., Oehme, M., Buca, D., Capellini, G., Schulze, J., & Schwarz, D. (2022). Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer. In ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings (pp. 165-168). Milan, ITA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Seidel, Lukas, et al. "Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer." Proceedings of the 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, Milan, ITA Institute of Electrical and Electronics Engineers Inc., 2022. 165-168.
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