Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers
Becker T, Boettcher N, Erlbacher T (2022)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2022
Publisher: VDE Verlag GmbH
Book Volume: 2022-March
Pages Range: 61-64
Conference Proceedings Title: ETG-Fachbericht
Event location: Berlin, DEU
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-85136098985&origin=inward
Abstract
– In this paper, we present a study focusing on the layer thickness of non-stoichiometric, silicon-rich silicon nitride in the dielectric layer stack of a Si RC-Snubber technology. We refer to a technology, which utilizes trench structures and low-stress silicon nitride in order to increase both dielectric breakdown strength and integration density for MNOS capacitors. By varying the ratio of low-stress silicon nitride and stoichiometric silicon nitride, while maintaining the overall dielectric stack thickness, superior electrical properties are achieved. The design of experiment covers low-stress to stoichiometric silicon nitride layer ratios in a range from 1:3 to 1:30. Following this approach, RC-Snubber devices are fabricated exhibiting capacitance density values of 31 nF/cm² and leakage current density values of under 0.2 µA/cm² at 1200 V
Involved external institutions
Germany (DE)How to cite
APA:
Becker, T., Boettcher, N., & Erlbacher, T. (2022). Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers. In ETG-Fachbericht (pp. 61-64). Berlin, DEU: VDE Verlag GmbH.
MLA:
Becker, T., N. Boettcher, and T. Erlbacher. "Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers." Proceedings of the 12th International Conference on Integrated Power Electronics Systems, CIPS 2022, Berlin, DEU VDE Verlag GmbH, 2022. 61-64.
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