Liu YY, Stehlik J, Eichler C, Mi X, Hartke TR, Gullans MJ, Taylor JM, Petta JR (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 119
Article Number: 097702
Journal Issue: 9
DOI: 10.1103/PhysRevLett.119.097702
We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.
APA:
Liu, Y.-Y., Stehlik, J., Eichler, C., Mi, X., Hartke, T.R., Gullans, M.J.,... Petta, J.R. (2017). Threshold Dynamics of a Semiconductor Single Atom Maser. Physical Review Letters, 119(9). https://dx.doi.org/10.1103/PhysRevLett.119.097702
MLA:
Liu, Y. -Y., et al. "Threshold Dynamics of a Semiconductor Single Atom Maser." Physical Review Letters 119.9 (2017).
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