Li M, Ma FJ, Peters IM, Shetty KD, Aberle AG, Hoex B, Samudra GS (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 7
Pages Range: 755-762
Article Number: 7890485
Journal Issue: 3
DOI: 10.1109/JPHOTOV.2017.2679342
Efficient optimization of the boron-doped region of silicon solar cells requires reliable process simulation of boron tube diffusion. Established simulation models and parameters are mostly calibrated for complementary metal oxide semiconductor device fabrication, where the doping processes are significantly different from those used in solar cell fabrication. In this paper, we present models and a set of corresponding parameters that are suitable for process simulation of BBr
APA:
Li, M., Ma, F.-J., Peters, I.M., Shetty, K.D., Aberle, A.G., Hoex, B., & Samudra, G.S. (2017). Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells. IEEE Journal of Photovoltaics, 7(3), 755-762. https://doi.org/10.1109/JPHOTOV.2017.2679342
MLA:
Li, Mengjie, et al. "Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells." IEEE Journal of Photovoltaics 7.3 (2017): 755-762.
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