Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer

Wang Y, Ren Z, Thway M, Lee K, Yoon SF, Peters IM, Buonassisi T, Fizgerald EA, Tan CS, Lee KH (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Solar Energy Materials and Solar Cells Elsevier

Book Volume: 172

Pages Range: 140-144

DOI: 10.1016/j.solmat.2017.07.028

Abstract

A single junction gallium arsenide (GaAs) solar cell on silicon (Si) substrate with energy conversion efficiency of 11.88% under the AM1.5 G spectrum at 1 sun intensity without an anti-reflection coating (ARC) has been developed. This development was enabled by utilizing an intermediate, thin arsenic-doped germanium (As-doped Ge) buffer layer. The thin epitaxial Ge layer (< 2 µm) grown on the Si substrate created a virtual Ge-on-Si (Ge/Si) substrate for subsequent growth of the GaAs solar cell, providing low threading dislocation density (TDD) of < 5 × 106 cm−2. The energy conversion efficiency could be further improved to 16% upon optimizing the ARC and metal coverage. Hence, a manufacturable III-V photovoltaic on a large-area Si substrate has become possible.

Involved external institutions

Singapore-MIT Alliance for Research and Technology (SMART) SG Singapore (SG) National University of Singapore (NUS) SG Singapore (SG)

How to cite

APA:

Wang, Y., Ren, Z., Thway, M., Lee, K., Yoon, S.F., Peters, I.M.,... Lee, K.H. (2017). Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer. Solar Energy Materials and Solar Cells, 172, 140-144. https://doi.org/10.1016/j.solmat.2017.07.028

MLA:

Wang, Yue, et al. "Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer." Solar Energy Materials and Solar Cells 172 (2017): 140-144.

BibTeX: Download