Non equilibrium anisotropic excitons in atomically thin ReS2

Urban JM, Baranowski M, Kuc A, Klopotowski L, Surrente A, Ma Y, Wlodarczyk D, Suchocki A, Ovchinnikov D, Heine T, Maude DK, Kis A, Plochocka P (2019)

Publication Type: Journal article

Publication year: 2019

Journal

2D Materials IOP Science

Book Volume: 6

Article Number: 015012

Journal Issue: 1

DOI: 10.1088/2053-1583/aae9b9

Abstract

We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by ∼20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS2 to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.

Involved external institutions

Laboratoire National des Champs Magnétiques Intenses (LNCMI) / French National High Magnetic Field Laboratory- CNRS

France (FR) Universität Leipzig

Germany (DE) Polska Akademia Nauk (PAN) / Polish Academy of Sciences

Poland (PL) École Polytechnique Fédérale de Lausanne (EPFL)

Switzerland (CH)

How to cite

APA:

Urban, J.M., Baranowski, M., Kuc, A., Klopotowski, L., Surrente, A., Ma, Y.,... Plochocka, P. (2019). Non equilibrium anisotropic excitons in atomically thin ReS2. 2D Materials, 6(1). https://doi.org/10.1088/2053-1583/aae9b9

MLA:

Urban, J. M., et al. "Non equilibrium anisotropic excitons in atomically thin ReS2." 2D Materials 6.1 (2019).

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