Two-dimensional ferroelastic topological insulators in single-layer Janus transition metal dichalcogenides MSSe(M=Mo, W)

Ma Y, Kou L, Huang B, Dai Y, Heine T (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Physical Review B American Physical Society

Book Volume: 98

Article Number: 085420

Journal Issue: 8

DOI: 10.1103/PhysRevB.98.085420

Abstract

Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe(M=Mo,W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in shape memory devices. Moreover, their topological phases harbor sizable nontrivial band gaps, which support the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multipurpose and controllable devices.

Involved external institutions

Shandong-University (SDU) CN China (CN) Queensland University of Technology (QUT) AU Australia (AU) Technische Universität Dresden DE Germany (DE)

How to cite

APA:

Ma, Y., Kou, L., Huang, B., Dai, Y., & Heine, T. (2018). Two-dimensional ferroelastic topological insulators in single-layer Janus transition metal dichalcogenides MSSe(M=Mo, W). Physical Review B, 98(8). https://doi.org/10.1103/PhysRevB.98.085420

MLA:

Ma, Yandong, et al. "Two-dimensional ferroelastic topological insulators in single-layer Janus transition metal dichalcogenides MSSe(M=Mo, W)." Physical Review B 98.8 (2018).

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